NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

Single output 15W ~ 1500W

Features ● marking (Low Voltage Directive) ● 74 models, 15 ~ 1500W ● Wide input voltage range EWS15, 25, 50: 85 ~ 265VAC universal input EWS100, 150, 300, 600: 100/200VAC auto-selectable EWS1500: 100/200VAC user-selectable ● Wide output voltage range: 520 (EWS300, 600, 1500) ●

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB50-28F is an NPN power transistor designed for 28 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metallization to provide optimum VSWR capability. FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. FEATURES: • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold™ Metalization System •

50 WATTS - 28VOLTS 200-450 MHZ

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