NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF892 is Designed for Class AB, Cellular Base Station Applications up to 900 MHz. FEATURES: • Internal Input Matching Network • PG =8.5 dB at 14 W/900 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

Silicon RF Switching Diode

Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (typ. 0.45 Ω @ 3 mA) • Small capacitance • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Band-switching diode

DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD523). FEATURES ● Small plastic SMD package ● Low diode capacitance ● Low diode forward resistance ● Small inductance. APPLICATIONS ● Low loss band-switching in VHF television tuners ● Surface mount b

Silicon Rf Switching Diode Preliminary data

Silicon Rf Switching Diode Preliminary data • For VHF band switching in TV / VTR tuners • Low forward resistance, small capacitance, small inductance

2A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown

General Description The MAX869L P-channel load switch features an accurate user-set current limit and low on-resistance. This switch is designed to protect your power source from shorts and surges by limiting current and preventing the system supply from being pulled low. The input voltage rang

Current-Limited, High-Side P-Channel Switches with Thermal Shutdown

General Description The MAX891L/MAX892L smart, low-voltage, P-channel, MOSFET power switches are intended for high-side load-switching applications. These switches operate with inputs from 2.7V to 5.5V, making them ideal for both 3V and 5V systems. Internal current-limiting circuitry protects t