NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. FEATURES: • PG = 5 dB min. at 3 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction version of PG4001S thru PG4007S in A-405 package ● 1 ampere operation at TA=75 ¢J with no thermal runaway ● Exceeds environmenta

Super Fast Soft Recovery Rectifier

FEATURES • Glass passivated • Hermetically sealed axial leaded glass envelope • Low reverse current • High reverse voltage • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switched mode power supplies • High-frequency inverter circ

1 AMP SMD SILICON RECTIFIER

1 AMP SMD SILICON RECTIFIER

1.0A ULTRAFAST RECOVERY RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

SURFACE MOUNT SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)

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