NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. FEATURES: • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. FEATURES: • Minimum Gain = 7.6 dB • Output Power = 40 W • Omnigold™ Metalization System

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

7W / 20W / 40W, 28V, VHF POWER TRANSISTOR

Description: These SSM devices are epitaxial silicon NPN-planar transistors designed primarily for 12.5 volt AM class C rf amplifiers functional in the aviation band 118-136 MHz and for 28V FM class C rf amplifers utilized in ground station transmitters. These devices utilize ballasted emitter re

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON