NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. FEATURES: • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 2307 is a common base transistor capable of providing 7 Watts CW RF output power at 2300 MHz. This hermetically sealed transistor is specifically designed for telemetry and telcommunications applications. It uiilizes gold metalilzation and diffused ballasting

7.0 Watts - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

Pneumatic muffler

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Nylon Hose Clamps

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3M??Masking Tape 2307

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