NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

文件：196.48 Kbytes Page：3 Pages

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS

Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At an appropriate duty cycle depending on ambien

Gas Discharge Tube Surge Protector

Bourns offers a low-cost surface mount (SM) 2-electrode GDT surge protection device. The 2003 Series is ideal for broadband protection due to its ultra-low capacitance. The 2003 Series offers superior protection characteristics suitable for telecommunications, commercial and industrial application

EU Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

HIGH QUALITY NETWORKING TRANSFORMERS

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Snap Bushings

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