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ASI1价格
参考价格：￥16.0083
型号：ASI12N35MQ 品牌：Mallory Sonalert 备注：这里有ASI1多少钱，2025年最近7天走势，今日出价，今日竞价，ASI1批发/采购报价，ASI1行情走势销售排行榜，ASI1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min.at 1.0 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI |   | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min at 2 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min at 5 W/ 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min. at 10 W/ 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 10 dB min.at 20 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN RF POWER TRANSISTOR DESCRIPTION: The ASI HF220-50F is a Common Emitter Device Designed for SSB Transmitter Applications in the 2 to 30 MHz Band. FEATURES INCLUDE: • PG = 13 dB min. @ 30 MHz • Gold Metallization • Emitter Ballasting | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF427 is Designed for high voltage applications up to 30 MHz FEATURES: • PG = 18 dB min. at 25 W/30 MHz • IMD3 = -34 dBc max. at 25 W(PEP) • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UMIL20 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 to 400 MHz Military Communications Band. FEATURES: • Direct Replacement for MRF323 • PG = 12 dB Typical at 400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for FEATURES: ● Input Matching Network ● Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR015 is an NPN silicon bipolar transistor designed for L-Band pulsed radar applications. It utilizes internal matching and gold metalization for high reliability and good VSWR capability. FEATURES: • 1.2 to 1.4 GHz operation • Internal Input/Output Matching Net | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR030 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 30 W/ 1400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR200 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 200 W/1400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR325 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for General Purpose Class C Operations up to 1.7 GHz. FEATURES: • Internal Input Matching Network • PG = 11 dB at 10 W/1.7 GHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT15 is Designed for General Purpose Class Operations up to 1.7 GHz. FEATURES: • Intenal Input Matching Network • PG = 9.2 dB at 15 W/1.7 GHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT20 is Designed for Genral Purpose Class C Operation up to 1.7 GHz. FEATURES: • Internal Input Matching Network • PG = 8.0 dB at 20 W/1.7 GHz • Omnigold™ Metalization System / Nitride Passivation • Common Base Class C | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT25 is Designed for FEATURES: • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT30 is Designed for General Purpose Class C Operation up to 1.7 GHz. FEATURES: • Internal Input/Output Matching Network • PG = 9.0 dB at 30 W/1.7 GHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min.at 1.0 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min at 2 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min at 5 W/ 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 12 dB min. at 10 W/ 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. FEATURES: • PG = 10 dB min.at 20 W / 1,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 1.0 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 3 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI2005 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 10 dB min. at 5W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. FEATURES: • PG = 5 dB min. at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz. FEATURES: • Internal Input/Output Matching Networks • PG = 8.0 dB at 4.0 W/2.3 GHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2223-12 is Designed for FEATURES: • Input Matching Network • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2223-20 is a Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications FEATURES: • Internal Input/Output Matching Networks • Emitter Balasting • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. FEATURES: • PG = 9.5 dB min. at 2 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. FEATURES: • PG = 9.5 dB min. at 4 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. FEATURES: • PG = 9.5 dB min. at 7 W / 2300 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 3000 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 0.5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 7 dB min. at 1.0 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 3003 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 5 dB min. at 3 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. FEATURES: • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. FEATURES: • PG = 5 dB min. at 0.5 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. FEATURES: • PG = 5 dB min. at 1.0 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. FEATURES: • PG = 5 dB min. at 3 W / 4,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT006 is Designed for 9 – 1215 MHz, JTIDS Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.3 dB at 6.0 W/1215 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT015 is Designed for FEATURES: • Input Matching Network •·Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT030 is Designed for FEATURES: • Input Matching Network • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT085 is an RF power transistor, designed for pulsed avionics applications with high duty cycle. FEATURES: • 960-1215 MHz • Internal Input/Output Matching Network • PG = 7.5 dB at 85 W/ 1215 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AJT150 is Designed for FEATURES: ● Input Matching Network ● Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. FEATURES: • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR500 is designed for high peak power & low duty cycle applications, in the 400-500 MHz. FEATURES: • Internal Input Matching Network • PG = 9.5 dB at 500 W/500 MHz • Omnigold™ Metalization System • Emitter Ballasting • Commomn Base | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD0.5P is Designed for FEATURES: • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD002F is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD004F is Designed for FEATURES: • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD004P is Designed for FEATURES: • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD015F is Designed for Class C, DME/TACAN Applications up to 1150 MHz . FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD015P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. FEATURES: • Class C Operation • PG = 10 dB at 15 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. FEATURES: • Class C Operation • PG = 10 dB at 35 W/1150 MHz • Omnigold™ Metalization System | ASI | | ||
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD035P is Designed for FEATURES: • Omnigold™ Metalization System | ASI | |
ASI1产品属性
- 类型
描述
- 型号
ASI1
- 制造商
ASI
- 制造商全称
ASI
- 功能描述
NPN SILICON RF POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMIS |
25+ |
SOP-20L |
123 |
原装正品,欢迎来电咨询! |
|||
ASIC |
2450+ |
QFP |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
INTERFACE |
23+ |
NA |
406 |
专做原装正品,假一罚百! |
|||
AS |
23+ |
QFP208 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NA |
25+ |
MQFP240 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
24+ |
DIP-8 |
7306 |
||||
ASI |
22+ |
SOIC-8 |
8200 |
原装现货库存.价格优势!! |
|||
AS |
24+ |
NA/ |
28 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ASI |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
25+ |
BGA |
2140 |
全新原装!现货特价供应 |
ASI1规格书下载地址
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- ASHEK
- ASH7KW-32.768KHZ-L-T
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- ASH7K-32.768KHZ-T
- ASH7K
- ASH5-D5
- ASH5-9
- ASH5-5
- ASH5-3
- ASH5-24
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- ASH25-9
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- ASH20-9
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- ASH20-3
- ASH-20
- ASH15-9
- ASH15-5
- ASGTX-P-500.000MHZ-2
- ASGTX-P-49.152MHZ-1
- ASGTX-P-24.576MHZ-1
- ASGTX-P-125.000MHZ-1
- ASGTX-P-120.000MHZ-1
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- ASGTX-P-100.000MHZ-1
- ASGTX-P-10.000MHZ-1
- ASGTX-P-1.500GHZ-1
- ASGTX-P-1.2890625GHZ-1
- ASGTX-P-1.000GHZ-1
- ASGTX-EVAL
- ASGTX-D-500.000MHZ-1
ASI1数据表相关新闻
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原装正品现货
2022-10-8ASFL1-12.288MHZ-EC-T
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2020-11-17
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