DC-3000 MHz SiGe HBT Amplifier

[ASB] Description The ASG101 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process

DC-3000 MHz SiGe HBT Amplifier

Description\nThe ASG101 is designed for high linearity, high gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the co ·SiGe Technology\n·22 dB Gain at 900 MHz\n·+18 dBm P1dB\n·+31 dBm Output IP3\n·3.0 dB Noise Figure\n·Single +4.5 V Supply\n·SOT-89 Surface Mount PackageApplications\n·CDMA, GSM, W-CDMA, PCS\n·PA Driver Amplifier\n·Gain Block\n·CATV Amplifier\n·IF Amplifier;

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages

Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages