AS7C34096价格

参考价格:¥20.4604

型号:AS7C34096A-10JIN 品牌:ALLIANCE MEMORY INC 备注:这里有AS7C34096多少钱,2025年最近7天走势,今日出价,今日竞价,AS7C34096批发/采购报价,AS7C34096行情走势销售排行榜,AS7C34096报价。
型号 功能描述 生产厂家 企业 LOGO 操作

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

5V/3.3V 512K X8 CMOS SRAM

The AS7C4096 and AS7C34096 are high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) devices organized as 524,288 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C4096 (5V versio

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

3.3V 512K x 8 CMOS SRAM

Features • Pin compatible to AS7C34096 • Industrial and commercial temperature • Organization: 524,288 words × 8 bits • Center power and ground pins • High speed - 10/12/15/20 ns address access time - 4/5/6/7 ns output enable access time • Low power consumption: ACTIVE -

ALSC

AS7C34096产品属性

  • 类型

    描述

  • 型号

    AS7C34096

  • 功能描述

    静态随机存取存储器 4M, 3.3V, 10ns, FAST 512K x 8 Asynch 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-12-25 16:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANCE
25+
CDIP
18000
原厂直接发货进口原装
ASC
2402+
TSOP44
8324
原装正品!实单价优!
ASC
22+
原厂原封
8200
原装现货库存.价格优势!!
ALLIANCE
原厂封装
9800
原装进口公司现货假一赔百
Alliance Memory Inc.
22+
36SOJ
9000
原厂渠道,现货配单
ALLIANC
25+
SOJ
275
百分百原装正品 真实公司现货库存 本公司只做原装 可
ALLIANCE
23+
SOJ
5000
一站式BOM配单
ALLIANCE
2023+
TSOP
50000
原装现货
ALLIANCE
23+
7300
专注配单,只做原装进口现货
ALLIANCE
22+
SOJ
20000
公司只做原装 品质保证

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