型号 功能描述 生产厂家 企业 LOGO 操作

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

Functional description The AS7C33128PFS32B and AS7C33128PFS36B are high-performance CMOS 4-Mbit synchronous Static Random Access Memory (SRAM) devices organized as 131,072 words × 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

ETC

知名厂家

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

文件:429.18 Kbytes Page:19 Pages

ALSC

3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD

ETC

知名厂家

AS7C33128NTF产品属性

  • 类型

    描述

  • 型号

    AS7C33128NTF

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD

更新时间:2025-12-18 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANCE
25+
TQFP100
159
原装正品,欢迎来电咨询!
ALLIANCE
24+
NA/
3520
原装现货,当天可交货,原型号开票
ALLIANCE
24+
QFP
990000
明嘉莱只做原装正品现货
Alliance三凌
25+
MQFP
3200
全新原装、诚信经营、公司现货销售!
alliance
25+
500000
行业低价,代理渠道
AS
2023+
QFP
8635
全新原装正品,优势价格
ALLANCE
25+
QFP
7500
ALLIANCESEMI
23+
NA
366
专做原装正品,假一罚百!
ALLIANCE
23+origianl
SRAM
11002
4Mb, SYNC SRAM, 128K x 36, 3.3V, Pipeline 100Pin T
ALLIANCE
23+
QFP
25807
原厂授权代理,海外优势订货渠道。可提供大量库存,详

AS7C33128NTF数据表相关新闻