型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31026-12

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

AS7C31026-12

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V/3.3V 64Kx6 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

5V / 3.3V 64KX16 CMOS SRAM

Functional description The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • A

ALSC

AS7C31026-12产品属性

  • 类型

    描述

  • 型号

    AS7C31026-12

  • 制造商

    ALSC

  • 制造商全称

    Alliance Semiconductor Corporation

  • 功能描述

    5V/3.3V 64Kx6 CMOS SRAM

更新时间:2025-11-21 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANCE
22+
TSSOP44
8000
原装正品支持实单
ALLIANCE
23+
BGA
3000
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AS
25+
BGA
3200
全新原装、诚信经营、公司现货销售!
24+
SOJ
7003
ALLIANCES
25+
TSOP
30000
代理全新原装现货,价格优势
Alliance
25+
42
公司优势库存 热卖中!!
ALLIANCE
25+
CDIP
18000
原厂直接发货进口原装
ALLIANCE
25+
TSOP44
3629
原装优势!房间现货!欢迎来电!
AS
22+
BGA
2000
原装正品现货
ALLIANCE
17+
TSOP44
6200
100%原装正品现货

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