3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C31025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and commerc