型号 功能描述 生产厂家 企业 LOGO 操作
AS7C31024B-10TJCN

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

AS7C31024B-10TJCN

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:管件 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

AS7C31024B-10TJCN

3.3 V 128K x 8 CMOS SRAM

ETC

知名厂家

封装/外壳:32-BSOJ(0.300",7.62mm 宽) 包装:托盘 描述:IC SRAM 1MBIT PARALLEL 32SOJ 集成电路(IC) 存储器

Alliance

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

3.3V 128K X 8 CMOS SRAM

Functional description The AS7C31024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and c

ALSC

AS7C31024B-10TJCN产品属性

  • 类型

    描述

  • 型号

    AS7C31024B-10TJCN

  • 功能描述

    静态随机存取存储器 1M, 3.3V, 10ns, FAST 128K x 8 Asynch 静态随机存取存储器

  • RoHS

  • 制造商

    Cypress Semiconductor

  • 存储容量

    16 Mbit

  • 组织

    1 M x 16

  • 访问时间

    55 ns

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.2 V

  • 最大工作电流

    22 uA

  • 最大工作温度

    + 85 C

  • 最小工作温度

    - 40 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    TSOP-48

  • 封装

    Tray

更新时间:2025-10-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ALLIANCE
24+
NA/
3336
原装现货,当天可交货,原型号开票
ALLIANCE
25+
SOJ32
102
原装正品,欢迎来电咨询!
Alliance Memory Inc.
23+
32SOJ
9000
原装正品,支持实单
Alliance Memory
2447
SOJ-32
315000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
ALLIMNCE
23+
SOJ
12800
公司只有原装 欢迎来电咨询。
ALLIMNCE
11+
SOJ
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ALLIANCE
23+origianl
SRAM
579
1Mb, SRAM, 128K x 8, 3.3V, 32pin 400 mil SOJ, 12ns
24+
N/A
70000
一级代理-主营优势-实惠价格-不悔选择
ALLIANCE
23+
SOJ32
50000
全新原装正品现货,支持订货
alliancememory
25+
32SOJ
8000
公司现货,提供样品技术

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