5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025C is a 5V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial (-40o

5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

5 V 128K x 8 CMOS SRAM

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout)

Functional description The AS7C1025A and AS7C31025A are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1

5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm