5V 128K X 8 CMOS SRAM

Functional description The AS7C1024C is a 5V high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial (-4

5V 128K X 8 CMOS SRAM

封装/外壳：32-BSOJ（0.400"，10.16mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

封装/外壳：32-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 1MBIT PARALLEL 32SOJ 集成电路（IC） 存储器

5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)

Functional description The AS7C1024A and AS7C31024A are high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Features

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and