封装/外壳：32-TFSOP（0.724"，18.40mm 宽） 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 32TSOP I 集成电路（IC） 存储器

静态随机存取存储器 1M, 5V, 15ns FAST 128K x 8 Asynch 静态随机存取存储器

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and

5V 128K X 8 CMOS SRAM

Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and