512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEAT

512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-p

封装/外壳：36-TFBGA 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器

512K x 8 Bit Low Power CMOS SRAM

封装/外壳：36-TFBGA 包装：卷带（TR） 描述：IC SRAM 4MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器

512K X 8 BIT LOW POWER CMOS SRAM

FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA (TYP.) Standby current : 4 μA (TYP.) Single 2.7V ~ 5.5V power supply All outputs TTL compatible Fully static operation Tri-state output Data retention voltage :1.5V (MIN.) All products ROHS Compliant Package : 32-p

512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEAT

512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C4008 is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEAT