256K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C2008 is a 2,097,152-bit low power CMOS static random access memory organized as 262,144 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C20

256K X 8 BIT LOW POWER CMOS SRAM

封装/外壳：36-TFBGA 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器

封装/外壳：32-SOIC（0.455"，11.30mm 宽） 包装：托盘 描述：IC SRAM 2MBIT PARALLEL 32SOP 集成电路（IC） 存储器

Fully static operation

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Fully static operation

256K x 8 Bit Low Power CMOS SRAM