128K X 8 BIT LOW POWER CMOS SRAM

GENERA L DESCRIPTION The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. FEATURE

128K X 8 BIT LOW POWER CMOS SRAM

128K X 8 BIT LOW POWER CMOS SRAM

GENERA L DESCRIPTION The AS6C1008 is a 1,048,57 6-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMO S technology. Its standby current is stable within the range of operating temperature. FEATURE

128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

128k x 8 BIT SUPER LOW POWER CMOS SRAM

GENERAL DESCRIPTION The AS6C1008L is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES

封装/外壳：36-TFBGA 包装：托盘 描述：IC SRAM 1MBIT PARALLEL 36TFBGA 集成电路（IC） 存储器

128K x 8 Bit Low Power CMOS SRAM

封装/外壳：32-DIP（0.600"，15.24mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC SRAM 1MBIT PARALLEL 32DIP 集成电路（IC） 存储器

128K x 8 Bit Low Power CMOS SRAM