Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture

Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture General Description ASI’s, AS28F128J3M Enhanced or Mil-Temp variant of Micron’s Q-Flash family of devices, is a nonvolatile, electrically block erasable (FLASH), programmab

NOR Cell Architecture

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3 Volt Intel StrataFlash Memory

Product Overview The 0.25 µ 3 Volt Intel StrataFlash memory family contains high-density memories organized as 16 Mbytes or 8 Mwords (128-Mbit), 8 Mbytes or 4 Mwords (64-Mbit), and 4 Mbytes or 2 Mwords (32-Mbit). These devices can be accessed as 8- or 16-bit words. The 128-Mbit device is organize

Q-FLASHTM MEMORY

GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F64

128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY

文件：35.62 Kbytes Page：6 Pages