包装：散装 描述：SILVERSTAT SOLDAPULLT DESOLDER T 焊接，拆焊，返修产品 吸锡网线，吸锡带 ，吸锡器，棉芯，泵

GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC-6.0 GHz

Description The AS196-307 is a GaAs FET IC SPDT non-reflective switch packaged in a 16 lead leadless exposed pad plastic package for low cost, high isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical.Typical applications in

GaAs IC High-Isolation SPDT Nonreflective Switch with Driver LF-6 GHz

Description The AS196-307 is a GaAs FET IC SPDT nonreflective switch packaged in a 16-lead exposed pad plastic package for low-cost, high-isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical. Typical applications include GSM

GaAs IC High-Isolation SPDT Nonreflective Switch with Driver LF-6 GHz

Description The AS196-307 is a GaAs FET IC SPDT nonreflective switch packaged in a 16-lead exposed pad plastic package for low-cost, high-isolation commercial applications. Ideal building block for base station applications where synthesizer isolation is critical. Typical applications include GSM

GaAs IC High-Isolation SPDT Nonreflective Switch with Driver LF-6 GHz

GaAs IC High Isolation SPDT Non-Reflective Switch with Driver DC?.0 GHz

封装/外壳：16-VQFN 裸露焊盘 包装：卷带（TR） 描述：IC RF SWITCH SPDT 6GHZ 16LPCC RF/IF，射频/中频和 RFID 射频开关

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=47kΩ, R2=22kΩ)

GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply)

GaAs MMIC ● Broadband Power Amplifier [ 800..3500 Mhz ] ● DECT,PHS,PCS,GSM,AMPS,WLAN,WLL ● Single Voltage Supply ● Operating voltage range: 2.0to 6 V ● Pout = 25.5dBm at Vd=2.4V ● Pout = 27.0dBm at Vd=3.0V ● Pout = 30.0dBm at Vd=5.0V ● Overall power added efficiency up to 50 ● Easy exter

Silicon Complementary Transistors Audio Power Output and Medium Power Switching

Description: The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack age designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE= 2.3 Min @ IC= 7A Collector–Emitter Sustaining Voltage: VCE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

LM196/LM396 10 Amp Adjustable Voltage Regulator

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