Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

Power LDMOS transistor

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

Power LDMOS transistor

General description Based on Advanced Rugged Technology (ART), this 1600 W LDMOS RF power transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 425 MHz. Features and benefits  High

Power LDMOS transistor

Power LDMOS transistor

封装/外壳：SOT-539BN 包装：托盘 描述：ART1K6FHS/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SOT-539A 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：ART1K6FH/SOT539/TRAY 分立半导体产品 晶体管 - FET，MOSFET - 射频

Schottky Barrier Rectifiers

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