RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

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RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

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RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

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包装：托盘 描述：RF PWR MOSFET 500V 10A 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

RF POWER MOSFET N-CHANNEL PUSH - PULL PAIR

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Square Type

Square Type □ 3.9 mm × 1.75 mm Series

Single/Dual/Quad, 10MHz Single-Supply Op Amps

General Description The single MAX473, dual MAX474, and quad MAX475 are single-supply (2.7V to 5.25V), unity-gain-stable op amps with rail-to-rail output swing. Each op amp guarantees a 10MHz unity-gain bandwidth, 15V/µs slew rate, and 600Ωdrive capability while typically consum ing only 2mA

Silicon NPN Transistor RF Power Output

Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz.

NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode

SPDT High Isolation Terminated Switch 0.5 - 3.0 GHz

Description The M/A-COM SW-475 GaAs monolithic switch provides high isolation in a low-cost, plastic surface mount package. The SW -475 is ideal for applications across a broad range of frequencies including synthesizer switching, transmit / receive switching, switch matrices and filter banks in