NPN Darlington With built-in avalanche diode

NPN Darlington With built-in avalanche diode

拉电流驱动器（内置雪崩光电二极管）阵列

硅 NPN 外延型达林顿晶体管阵列（四合一）\n拉电流驱动器阵列。 ・集电极与基极之间内置雪崩二极管\n・内置 4 个 NPN 达林顿三极管。\n・直流电流放大倍数高;

NPN Darlington With built-in avalanche diode

文件：39.79 Kbytes Page：1 Pages

NPN Darlington With built-in avalanche diode

文件：39.79 Kbytes Page：1 Pages

封装/外壳：10-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS 4NPN DARL 100V 2A 10SIP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

NPN Darlington With built-in avalanche diode

文件：39.79 Kbytes Page：1 Pages

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

Single/Dual/Quad, 10MHz Single-Supply Op Amps

General Description The single MAX473, dual MAX474, and quad MAX475 are single-supply (2.7V to 5.25V), unity-gain-stable op amps with rail-to-rail output swing. Each op amp guarantees a 10MHz unity-gain bandwidth, 15V/µs slew rate, and 600Ωdrive capability while typically consum ing only 2mA

Silicon NPN Transistor RF Power Output

Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz.

SPDT High Isolation Terminated Switch 0.5 - 3.0 GHz

Description The M/A-COM SW-475 GaAs monolithic switch provides high isolation in a low-cost, plastic surface mount package. The SW -475 is ideal for applications across a broad range of frequencies including synthesizer switching, transmit / receive switching, switch matrices and filter banks in