RF POWER MOSFET FULL-BRIDGE

The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz. • Specified 300 Volt, 27.12 MHz Characteristics: Output Powe

RF POWER MOSFET

The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz. • Specified 300 Volt, 27.12 MHz Characteristics: Output Powe

封装/外壳：T-1 包装：托盘 描述：MOSFET RF N-CH 1000V 8A T1 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF VDMOS Power Devices

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

3MTM Hi?밫ack Conformable Double Coated Tape

文件：49.7 Kbytes Page：2 Pages

24 AWG stranded (7x32) TC conductor, polyolefin insulation, individually shielded Beldfoil

文件：87.09 Kbytes Page：3 Pages