BUTTON DIODES

VOLTAGE RANGE 100 TO 600 VOLTS CURRENT 25AMPS Features Low leakage Low forward voltage drop High current capability High forward surge current capability

BUTTON DIODES VOLTAGE RANGE 100 TO 600 VOLTSCURRENT 25AMPS

VOLTAGE RANGE 100 TO 600 VOLTS CURRENT 25AMPS Features Low leakage Low forward voltage drop High current capability High forward surge current capability Mechanical Data Case: transfer molded plastic Technology: vcauum soldered Polarity: color ring denotes cathode

全极高频计数霍尔,跳绳计数霍尔元件

全极高频霍尔开关AR253是基于CMOS工艺设计和生产的霍尔IC，元件内部集成了霍尔效应片、电压调节器、休眠唤醒控制电路、信号放大滤波电路、偏移补偿电路、施密特触发器，开漏极输出。与AR471周期性周期检测磁场不同，霍尔传感器AR253连续检测环境磁场强度，响应速度快，但功耗较大(2.5mA)。无极性霍尔芯片AR253不区分N极和S极，对N极和S极都感应，因此便于较小磁钢的装配。电压是2.5-6V.

Amplifiers

10 TO 2500 MHz

文件：73.62 Kbytes Page：1 Pages

TO-8B CASCADABLE AR2538 AMPLIFIER

文件：180.86 Kbytes Page：2 Pages

POWER TRANSISTORS COMPLEMENTARY SILICON

These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40−200

4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253 • High DC Current Gain @ IC = 200 mAdc

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)

SILICON TRIACS

● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGTof 50 mA (Quadrants 1 - 3)