PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

封装/外壳：4-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY SPST-NO 2A 0-200V 继电器 固态继电器

封装/外壳：4-SIP 包装：管件 描述：SSR RELAY SPST-NO 2A 0-200V 继电器 固态继电器

PhotoMOS 功率 1a 高容量

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounti

SCHOTTKY BARRIER RECTIFIERS(2.0A,70-100V)

SCHOTTKY BARRIER RECTIFIER 2.0A 70-100V

Operational Amplifiers

文件：194.55 Kbytes Page：10 Pages

Operational Amplifiers

文件：194.55 Kbytes Page：10 Pages

Darlington Phototransistor

文件：38.5 Kbytes Page：2 Pages