HE (High-function Economy) Type [2-Channel (Form B) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals Pho

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY SPST-NC 120MA 0-400V 继电器 固态继电器

封装/外壳：8-DIP（0.300"，7.62mm） 包装：散装 描述：SSR RELAY SPST-NC 120MA 0-400V 继电器 固态继电器

PhotoMOS HE 2b

HE (High-function Economy) Type [2-Channel (Form B) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals Pho

HE (High-function Economy) Type [2-Channel (Form B) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals Pho

HE (High-function Economy) Type [2-Channel (Form B) Type]

FEATURES 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L) 9.78×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch , 8-pin DIP size (through hole terminal type). 2. Applicable for 2 Form B use as well as two independent 1 Form B use. 3. Controls low-level analog signals Pho

PhotoMOS HE 2b

PhotoMOS HE 2b

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

SURFACE MOUNT SILICON ZENER DIODES

VZ : 2.7 - 200 Volts PD : 2 Watts FEATURES : * Complete Voltage Range 2.7 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt