PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

封装/外壳：8-DIP（0.400"，10.16mm） 包装：散装 描述：SSR RELAY SPST-NO 1.1A 0-100V 继电器 固态继电器

封装/外壳：8-DIP（0.400"，10.16mm） 包装：散装 描述：SSR RELAY SPST-NO 1.1A 0-100V 继电器 固态继电器

固态继电器(可控硅输出)

PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

PhotoMOS RELAYS

PD Type 2-channel (Form A) Type FEATURES 1. Flat-Packaged Type (W) 8.8× (D) 19.46× (H) 3.9mm (W) .346× (D) .766×(H) .154inch 2. High capacity Supports the various types of load control, from very small loads to a maximum 1.8A at the rated load voltage 60V (AQW272) 3. High sensitivity • Lo

Square Type

Square Type □ 3.9 mm × 1.75 mm Series

150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

The RF MOSFET Line Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc Output Power — 150 Watts Power Gain — 10 dB (Min) Efficiency —

Silicon Complementary Transistors Darlington Power Amplifier, Switch

Description: The NTE274 (NPN) and NTE275 (PNP) are silicon complementary Darlington transistors in a TO66 type case designed for general purpose amplifier, low–frequency switching and hammer driver applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 2A • Low Collect

AXIAL LEAD BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

FEATURES • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX, LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capacit

SURFACE MOUNT BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR DEVICE

Features • Protects by limiting voltages and shunting surge currents away from sensitive circuits • Designed for telecommunications applications such as line cards, modems, PBX, FAX,LAN,VHDSL • Helps meet standards such as GR1089, ITU K.20, IEC950, UL1459&50, FCC part 68 • Low capa