Both low on-resistance and good cost-performance achieved. Measuring instruments

FEATURES 1. Wide variation of 40V, 60V, 100V, 200V, 250V, 400V, 600V, 1,000V and 1,500V load voltage 2. Low on-resistance of typ. 0.6Ω (AQV251) 3. Reinforced insulation type of 5,000V I/O isolation available TYPICAL APPLICATIONS • Measuring instruments • Data communication equipment • Telep

HE (High-function Economy) Type [1-Channel (Form A) Type]

FEATURES 1. Highly sensitive and low on-resistance 2. Controls various types of loads such as relays, motors, lamps and solenoids. 3. Optical coupling for extremely high isolation 5,000 Vrms I/O isolation available. 4. Low-level off state leakage current 5. Eliminates the need for a p

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 350MA 0-100V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：卷带（TR） 描述：SSR RELAY DPST-NO 350MA 0-100V 继电器 固态继电器

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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