PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

封装/外壳：6-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SSR RELAY DPST-NO 2.5A 0-60V 继电器 固态继电器

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：SSR RELAY DPST-NO 2.5A 0-60V 继电器 固态继电器

PhotoMOS HE 1a 高容量 (6脚型)

PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

PhotoMOS HE 1 Form A High Capacity

FEATURES Greatly increased load current in a compact DIP package Continuous load current: 3.5A (AQV251G) Greatly improved specifications allow you to use this in place of mercury and mechanical relays Low on-resistance (Typ. 35mΩ, AQV251G)

PhotoMOS HE SOP 1a 高容量 (6脚型)

PhotoMOS HE SOP 1a 高容量 (6脚型)

High capacity in a miniature SOP package

文件：168.96 Kbytes Page：5 Pages

High capacity in a miniature SOP package

文件：168.96 Kbytes Page：5 Pages

High capacity in a miniature SOP package

文件：168.96 Kbytes Page：5 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

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