DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 80MA 0-40V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 80MA 0-40V 继电器 固态继电器

DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

DIP6-pin type suited for radio frequent switching

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switching FEATURES 1. High frequency characteristics with low capacitance between output terminals Low output capacitance: typ. 4.8 pF Isolation loss: 40 dB or more (at 1 MHz)(AQV225) 2. High speed switching

固态继电器(MOS输出)

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: • Extremely Low Feedback Capacitance •

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing