Controls low-level input signals. Controls load voltage 60V to 600V.

PhotoMOS Relay Dimensions

GU (General Use) Type [1-Channel (Form A) Type]

GU (General Use) Type [1-Channel (Form A) Type] FEATURES 1. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 2. Control with low-level input signals 3. Controls vari

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 320MA 0-100V 继电器 固态继电器

封装/外壳：6-SMD（0.300"，7.62mm） 包装：散装 描述：SSR RELAY DPST-NO 320MA 0-100V 继电器 固态继电器

PhotoMOS GU 1a (6脚型)

Controls low-level input signals. Controls load voltage 60V to 600V.

PhotoMOS Relay Dimensions

GU (General Use) Type [1-Channel (Form A) Type]

GU (General Use) Type [1-Channel (Form A) Type] FEATURES 1. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 2. Control with low-level input signals 3. Controls vari

Controls low-level input signals. Controls load voltage 60V to 600V.

PhotoMOS Relay Dimensions

GU (General Use) Type [1-Channel (Form A) Type]

GU (General Use) Type [1-Channel (Form A) Type] FEATURES 1. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 2. Control with low-level input signals 3. Controls vari

PhotoMOS GU 1a (6脚型)

PhotoMOS GU 1a (6脚型)

UHF variable capacitance diode

DESCRIPTION The BB215 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD80 glass SMD package. FEATURES • Excellent linearity • Matched to 3 • Small hermetically sealed glass SMD package • C28: 2 pF; ratio: 8.3 • Low series resistance. APPLICATIONS

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon NPN Transistor Darlington Driver

Description: The NTE215 is a silicon NPN Darlington transistor in a TO3P type package. Typical applications in clude motor drivers, printer hammer drivers, relay drivers, regulated DC power supply controllers. Features: • High DC Current Gain • Large Current Capacity and Wide ASO

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic