Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • T-MAX™ or TO-264 P

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall

Quad 350 MHz 24 V Amplifier

PRODUCT DESCRIPTION The AD8024 is a low settling time, high-speed, high output voltage quad current feedback operational amplifier. Manufactured on ADI’s proprietary XFHV high-speed bipolar process, the AD8024 is capable of driving to within 1.3 V of its 24 V supply rail. Each amplifier has high-

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because