Quad 350 MHz 24 V Amplifier

PRODUCT DESCRIPTION The AD8024 is a low settling time, high-speed, high output voltage quad current feedback operational amplifier. Manufactured on ADI’s proprietary XFHV high-speed bipolar process, the AD8024 is capable of driving to within 1.3 V of its 24 V supply rail. Each amplifier has high-

四核350 MHz 24 V放大器

AD8024是一款建立时间短、高速、高输出电压、四核电流反馈型运算放大器。它采用ADI公司专有XFHV高速双极性工艺制造，能驱动至其24 V供电轨的1.3 V范围以内。每个放大器均具有高输出电流能力，可以驱动高容性负载。 • 四核高速电流反馈型放大器，具有禁用特性\n-3dB带宽：350MHz (G = +1)\n压摆率：2400 V/µs，VS=±12V\n\n• 驱动高容性负载\n0.1%建立时间：35 ns(300 pF负载，6 V步进)\n0.1%建立时间：18 ns(5 pF负载，2 V步进)\n\n• 低功耗\n采用+5 V至±12 V (24V)电源供电\n电源电流：每放大器4 mA\n\n• 出色的视频特性(RL = 150 O,G = +2)\n0.1 dB增益平坦度： 70 MHz\n差分增益误差：0.04%\n差分相位误差：0.09° \n\n• 串扰：-58dB ;

Quad 350 MHz 24 V Amplifier

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Quad 350 MHz 24 V Amplifier

PRODUCT DESCRIPTION The AD8024 is a low settling time, high-speed, high output voltage quad current feedback operational amplifier. Manufactured on ADI’s proprietary XFHV high-speed bipolar process, the AD8024 is capable of driving to within 1.3 V of its 24 V supply rail. Each amplifier has high-

Universal AC input

Special Features • CE Mark EMC & LVD • Universal AC input • Fully regulated output • Overcurrent, Overvoltage and Thermal protection • Constant voltage • High efficiency • High MTBF • IEC320 AC receptacle, 3 pin (type C14) • Built in EMI filter • (CISPR 22 Class B) • AC In

Quad 350 MHz 24 V Amplifier

文件：166.41 Kbytes Page：12 Pages

Quad 350 MHz 24 V Amplifier

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Quad 350 MHz 24 V Amplifier

文件：186.59 Kbytes Page：13 Pages

Quad 350 MHz 24 V Amplifier

文件：166.41 Kbytes Page：12 Pages

Quad 350 MHz 24 V Amplifier

文件：166.41 Kbytes Page：12 Pages

Quad 350 MHz 24 V Amplifier

文件：166.41 Kbytes Page：12 Pages

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TMby significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionall

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because

Silicon planar type

Silicon planar type For stabilization of power supply ■Features •Extremely low noise voltage caused from the diode (2.4V to 39V, 1/3 to 1/10 of our conventional MAZ3000 series) •Extremely good rising performance (in the low-current range) •Easy-to-select the optimum diode because