APT60M75价格

参考价格:¥272.1049

型号:APT60M75JFLL 品牌:Microsemi 备注:这里有APT60M75多少钱,2025年最近7天走势,今日出价,今日竞价,APT60M75批发/采购报价,APT60M75行情走势销售排行榜,APT60M75报价。
型号 功能描述 生产厂家 企业 LOGO 操作
APT60M75

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

APT60M75

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

POWER MOS 7 R FREDFET

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

POWER MOS 7 R FREDFET

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

ADPOW

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 73A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-Channel MOSFET

Microchip

微芯科技

POWER MOS 7 R MOSFET

文件:162.82 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 R MOSFET

文件:162.82 Kbytes Page:5 Pages

ADPOW

FREDFETs

Microchip

微芯科技

N-Channel MOSFET

Microchip

微芯科技

isc N-Channel MOSFET Transistor

文件:300.14 Kbytes Page:2 Pages

ISC

无锡固电

POWER MOS 7 R FREDFET

文件:156.34 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 R FREDFET

文件:156.34 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 R MOSFET

文件:155.62 Kbytes Page:5 Pages

ADPOW

POWER MOS 7 R MOSFET

文件:155.62 Kbytes Page:5 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:36.1 Kbytes Page:2 Pages

ADPOW

APT60M75产品属性

  • 类型

    描述

  • 型号

    APT60M75

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2025-11-23 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
25+
TO247
7189
原装正品,欢迎来电咨询!
APT
22+
TO-3PL
8000
原装正品支持实单
APT
24+
8866
MICROCHIP(美国微芯)
24+
-
7793
支持大陆交货,美金交易。原装现货库存。
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
APT
2023+
MODULE
212
主打螺丝模块系列
APT
23+
模块
5000
原装正品,假一罚十
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
APT
24+
模块
3500
原装现货,可开13%税票
APT
NEW
模块
3562
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订

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