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APT6030BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

APT6030BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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APT6030BVR

isc N-Channel MOSFET Transistor

文件:420.34 Kbytes Page:2 Pages

ISC

无锡固电

APT6030BVR

POWER MOS V 600V 21A 0.300 Ohm

APT

晶科电子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

N-Channel MOSFET

ROHS

MICROCHIP

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® MOSFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

N-Channel Logic Level PowerTrench MOSFET

General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with

FAIRCHILD

仙童半导体

LOW DROP POWER SCHOTTKY RECTIFIER

DESCRIPTION Dual Schottky rectifier suited for switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ VERY SMALL CO

STMICROELECTRONICS

意法半导体

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 50 Volts CURRENT 60 Amperes)

文件:230.18 Kbytes Page:2 Pages

RECTRON

丽正

APT6030BVR产品属性

  • 类型

    描述

  • 型号

    APT6030BVR

  • 制造商

    Microsemi Corporation

  • 功能描述

    Trans MOSFET N-CH 600V 21A 3-Pin(3+Tab) TO-247

更新时间:2026-5-14 11:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microch
20+
NA
33560
原装优势主营型号-可开原型号增税票
APT
23+
MODULE
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
26+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
APT
23+
TO-247B
8400
专注配单,只做原装进口现货
APT
2447
TO-3P
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
APT
24+
8866
MICROCHIP/微芯
2406+
33000
诚信经营!进口原装!量大价优!
APT
22+
TO-3P
8200
原装现货库存.价格优势!!
APT
22+
TO-247
8000
原装正品支持实单
APTMICROSEMI
22+
TO-247B
6000
十年配单,只做原装

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