位置：首页 > IC中文资料第4015页 > APT50M85JVR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT50M85JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | MICROSEMI 美高森美 |   | |
APT50M85JVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | |
APT50M85JVR | N-Channel MOSFET ROHS | MICROCHIP 微芯科技 | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | MICROSEMI 美高森美 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific | ADPOW | |
APT50M85JVR产品属性
- 类型
描述
- 型号
APT50M85JVR
- 功能描述
MOSFET N-CH 500V 50A SOT-227
- RoHS
是
- 类别
半导体模块 >> FET
- 系列
POWER MOS V®
- 标准包装
10
- 系列
*
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
26+ |
320 |
现货供应 |
||||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
26+ |
模块 |
3562 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
Microsemi |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
APT |
25+ |
MODULE |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
APT |
23+ |
模块 |
595 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
APT |
24+ |
28 |
|||||
APT |
26+ |
模块 |
3500 |
原装现货,可开13%税票 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
APT50M85JVR芯片相关品牌
APT50M85JVR规格书下载地址
APT50M85JVR参数引脚图相关
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APT50M85JVR数据表相关新闻
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2019-3-5
DdatasheetPDF页码索引
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