位置：首页 > IC中文资料第3201页 > APT50M85JVFR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT50M85JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | MICROSEMI 美高森美 |   | |
APT50M85JVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | |
APT50M85JVFR | FREDFETs ROHS | MICROCHIP 微芯科技 | | |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific | ADPOW | |
APT50M85JVFR产品属性
- 类型
描述
- 型号
APT50M85JVFR
- 功能描述
MOSFET N-CH 500V 50A SOT-227
- RoHS
是
- 类别
半导体模块 >> FET
- 系列
POWER MOS V®
- 标准包装
10
- 系列
*
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
26+ |
模块 |
3500 |
原装现货,可开13%税票 |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
Microsemi Corporation |
22+ |
SOT227 |
9000 |
原厂渠道,现货配单 |
|||
APT |
25+ |
模块 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
APT |
23+ |
MODULE |
7300 |
专注配单,只做原装进口现货 |
|||
APT |
23+ |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
APT |
24+ |
28 |
APT50M85JVFR芯片相关品牌
APT50M85JVFR规格书下载地址
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DdatasheetPDF页码索引
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