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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific | ADPOW |   | |
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden | ADPOW | | |
APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | APT 晶科 | | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Cissand Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Iden | ADPOW | | ||
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current :ID= 58A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：420.23 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 文件：97.37 Kbytes Page：4 Pages | ADPOW | | ||
POWER MOS V 文件：97.37 Kbytes Page：4 Pages | ADPOW | | ||
POWER MOS V 文件：95.91 Kbytes Page：4 Pages | ADPOW | | ||
POWER MOS V 文件：95.91 Kbytes Page：4 Pages | ADPOW | | ||
POWER MOS IV 500V 52A 0.080 Ohm | APT 晶科 | | ||
POWER MOS V 文件：97.37 Kbytes Page：4 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：299.96 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
FREDFETs | Microchip 微芯科技 | | ||
POWER MOS V 文件：95.91 Kbytes Page：4 Pages | ADPOW | |
APT50M80产品属性
- 类型
描述
- 型号
APT50M80
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
TO-247 |
5000 |
全新原装正品,现货销售 |
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APT |
24+ |
SMD |
9600 |
原装现货,优势供应,支持实单! |
|||
APTMICROSEMI |
23+ |
TO-264L |
21368 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
2447 |
TO-247 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
APTMICROSEMI |
23+ |
TO-247 |
8400 |
专注配单,只做原装进口现货 |
|||
APT |
23+ |
TO264 |
50000 |
全新原装正品现货,支持订货 |
|||
APT |
23+ |
模块 |
360 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
APT |
24+ |
8866 |
|||||
APT |
24+ |
TO264 |
5000 |
全现原装公司现货 |
|||
APT |
22+ |
TO-3PL |
8000 |
原装正品支持实单 |
APT50M80芯片相关品牌
APT50M80规格书下载地址
APT50M80参数引脚图相关
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APT50M80数据表相关新闻
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DdatasheetPDF页码索引
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