N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

MOSFET N-CH 500V 23A TO247AD

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

(THM) THRU HOLE MOUNT TEST POINTS - COLOR KEYED

• Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d

(THM) THRU HOLE MOUNT TEST POINTS - COLOR KEYED

• Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d

Power Cord with Special Plug and Connector, Straight

Description Power Cord, - Protection class II, Pin temperature 70 °C, Cable

J5800-001 INSERTION TOOL PRODUCT SPECIFICATION

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PCMCIA PC Memory Card Connectors

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