Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VI™ optimized gate layout, delivers exceptionall

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 28A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 28A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.2Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode p

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VI™ optimized gate layout, delivers exceptionall

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switc

MOSFET N-CH 500V 28A TO247AD

MOSFET N-CH 500V 28A TO247AD

POWER MOS V 500V 26A 0.200 Ohm

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

文件：419.1 Kbytes Page：2 Pages

HERMETICALLY SEALED THERMOSTAT PROBE

Features • 1/2” disc button style • Hermetic glass seal, grounded-case only • Ideal for immersion sensing Applications • Hydraulic systems • Degreasers • Industrial and portable compressors • Refrigeration systems • Generator sets • Chemical baths • Engine coolant • Oil and transmi

THRU HOLE MOUNT TEST POINTS - COLOR KEYED

• Color keyed for visibility and quick identification • Economical choice for PC test point terminations • Snap-fit mounting provides positive retention for wave soldering • Wire form loop for safe, non-slip testing • Space saving, ultra low and low profile designs • High profile design for d

Fire Alarm, #12-2c BC, Shielded, FPL

Product Description Fire Alarm Cable, Rated-FPL, 2-12 AWG solid bare copper conductors with foam polyolefin insulation, overall Beldfoil® shield, PVC jacket with ripcord

THRU HOLE MOUNT UNINSULATED TEST POINT

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24 (7/32) AWG Tinned Copper

文件：411.38 Kbytes Page：4 Pages