型号 功能描述 生产厂家&企业 LOGO 操作
APT5020

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitc

ADPOW

Advanced Power Technology

ADPOW
APT5020

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI™optimizedgatelayout,deliversexceptionall

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecovery

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitchi

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI™optimizedgatelayout,deliversexceptionall

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitc

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

文件:419.11 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

文件:419.1 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

FireAlarm,#12-2cBC,Shielded,FPL

ProductDescription FireAlarmCable,Rated-FPL,2-12AWGsolidbarecopperconductorswithfoampolyolefininsulation,overallBeldfoil®shield,PVCjacketwithripcord

BELDEN

Belden Inc.

BELDEN

FireAlarm,#12-2cBC,Shielded,FPLR

ProductDescription FireAlarmCable,Riser-FPLR,2-12AWGsolidbarecopperconductorswithpolyolefininsulation,overallBeldfoil®shield,PVCjacketwithripcord

BELDEN

Belden Inc.

BELDEN

FireAlarm,#12-2cBC,Shielded,NPLF

ProductDescription FireAlarmCable,Rated-NPLF,2-12AWGsolidbarecopperconductorswithPVC/nyloninsulation,overallBeldfoil®shield,PVCjacketwithripcord

BELDEN

Belden Inc.

BELDEN

THRUHOLEMOUNTUNINSULATEDTESTPOINT

文件:72.06 Kbytes Page:1 Pages

KEYSTONEKeystone Electronics Corp.

Keystone公司Keystone Electronics有限公司

KEYSTONE

EMIAbsorber

文件:200.17 Kbytes Page:2 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

APT5020产品属性

  • 类型

    描述

  • 型号

    APT5020

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2024-4-23 20:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Microchip Technology
23+
D3PAK
30000
晶体管-分立半导体产品-原装正品
Microchip
20000
22
6000
全新、原装
MICROSEMI/美高森美
23+
TO-247
12500
全新原装现货,假一赔十
APT
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
APT
2020+
原厂封装
350000
100%进口原装正品公司现货库存
APT
1932+
TO-247
265
一级代理,专注军工、汽车、医疗、工业、新能源、电力
23+
TO-247
20000
原厂原装正品现货
MICROSEMI
21+
TO-247
2465
只做原装正品,不止网上数量,欢迎电话微信查询!
APT
23+
TO-3P
3000
专做原装正品,假一罚百!
MICROSEMI/美高森美
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

APT5020芯片相关品牌

  • ABC
  • CIT
  • CONTRINEX
  • EPCOS
  • GMT
  • LRC
  • MOLEX5
  • OPLINK
  • Samtec
  • TOTAL-POWER
  • TSC
  • Vishay

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