位置：首页 > IC中文资料第7281页 > APT5017
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
APT5017 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW |   | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.58 Kbytes Page：4 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：419.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：419.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 文件：49.07 Kbytes Page：4 Pages | ADPOW | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：202.43 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：203.29 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：312.59 Kbytes Page：2 Pages | SCHURTER 硕特 | | ||
Delay Line With Fully Integrated Fiber Optics 文件：1.53301 Mbytes Page：5 Pages | EMCORE Emcore Corporation | | ||
Delay Line With Fully Integrated Fiber Optics 文件：1.53301 Mbytes Page：5 Pages | EMCORE Emcore Corporation | |
APT5017产品属性
- 类型
描述
- 型号
APT5017
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROSEMI/美高森美 |
24+ |
TO-247 |
9600 |
原装现货,优势供应,支持实单! |
|||
APT |
23+ |
32322 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
APT |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
APT |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
|||
APT |
21+ |
TO-247 |
17 |
原装现货假一赔十 |
|||
APT |
25+23+ |
TO-247 |
55239 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
APT |
23+24 |
TO-247 |
56589 |
主营ON原装,原盘原标,提供BOM一站式配单 |
|||
APT |
24+ |
8866 |
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APT5017规格书下载地址
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DdatasheetPDF页码索引
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