位置：首页 > IC中文资料第7281页 > APT5017
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT5017 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW |   | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.58 Kbytes Page：4 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：419.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 500V 30A 0.170 Ohm | APT 晶科电子 | | ||
FREDFETs | Microchip 微芯科技 | | ||
POWER MOS V 500V 30A 0.170 Ohm | APT 晶科电子 | | ||
isc N-Channel MOSFET Transistor 文件：419.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 文件：49.07 Kbytes Page：4 Pages | ADPOW | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：202.43 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：203.29 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
SMT TEST POINTS 文件：679.66 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：312.59 Kbytes Page：2 Pages | SCHURTER 硕特 | | ||
Delay Line With Fully Integrated Fiber Optics 文件：1.53301 Mbytes Page：5 Pages | EMCORE Emcore Corporation | |
APT5017产品属性
- 类型
描述
- 型号
APT5017
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ATP |
05+ |
TO-247 |
600 |
原装进口 |
|||
APT |
23+24 |
TO-247 |
56589 |
主营ON原装,原盘原标,提供BOM一站式配单 |
|||
MICROCHIP(美国微芯) |
24+ |
TO-268 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
APT |
24+/25+ |
12 |
原装正品现货库存价优 |
||||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MICROSEMI |
2023+ |
TO-247 |
5800 |
进口原装,现货热卖 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
24+ |
TO247 |
60000 |
||||
MICROSEMI/美高森美 |
21+ |
TO-247 |
120000 |
长期代理优势供应 |
|||
MICROSEMI/美高森美 |
24+ |
TO-247 |
9600 |
原装现货,优势供应,支持实单! |
APT5017规格书下载地址
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DdatasheetPDF页码索引
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