位置：首页 > IC中文资料第7281页 > APT5017
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
APT5017 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW |   | |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switchi | ADPOW | | ||
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. POWER MOS VI™ Power MOS VI™ is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：62.58 Kbytes Page：4 Pages | ADPOW | | ||
isc N-Channel MOSFET Transistor 文件：419.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
FREDFETs | Microchip 微芯科技 | | ||
POWER MOS V 500V 30A 0.170 Ohm | APT 晶科 | | ||
isc N-Channel MOSFET Transistor 文件：419.16 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
POWER MOS V 文件：49.07 Kbytes Page：4 Pages | ADPOW | | ||
N-Channel MOSFET | Microchip 微芯科技 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：202.43 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：203.29 Kbytes Page：3 Pages | SCHURTER 硕特 | | ||
IEC Appliance Outlet J, Screw-on Mounting, Front Side, Quick-connect Terminal 文件：312.59 Kbytes Page：2 Pages | SCHURTER 硕特 | | ||
Delay Line With Fully Integrated Fiber Optics 文件：1.53301 Mbytes Page：5 Pages | EMCORE Emcore Corporation | | ||
Delay Line With Fully Integrated Fiber Optics 文件：1.53301 Mbytes Page：5 Pages | EMCORE Emcore Corporation | |
APT5017产品属性
- 类型
描述
- 型号
APT5017
- 制造商
ADPOW
- 制造商全称
Advanced Power Technology
- 功能描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
APT |
24+ |
NA/ |
13818 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
APT |
2016+ |
TO247 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Microsemi/美高森美 |
25+ |
TO-247 |
2334 |
原装正品,欢迎来电咨询! |
|||
APT |
24+/25+ |
12 |
原装正品现货库存价优 |
||||
APT |
07+ |
TO-247 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microch |
20+ |
NA |
33560 |
原装优势主营型号-可开原型号增税票 |
|||
APT |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
|||
MICROSEMI/美高森美 |
21+ |
TO-247 |
120000 |
长期代理优势供应 |
|||
APT |
25+23+ |
TO-247 |
55239 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
APT |
24+ |
8866 |
APT5017规格书下载地址
APT5017参数引脚图相关
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DdatasheetPDF页码索引
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