位置:首页 > IC中文资料第356页 > APT5010B2VR
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
APT5010B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching | ADPOW | ||
APT5010B2VR | isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 47A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | ||
APT5010B2VR | New T-MAX??Package (Clip-mounted TO-247 Package) 文件:66.57 Kbytes Page:4 Pages | ADPOW | ||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
New T-MAX??Package (Clip-mounted TO-247 Package) 文件:66.57 Kbytes Page:4 Pages | ADPOW | |||
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7® FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alo | ADPOW | |||
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs POWER MOS VI™ Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, deliver | ADPOW | |||
POWER MOS 7 FREDFET 文件:174.11 Kbytes Page:5 Pages | ADPOW | |||
isc N-Channel MOSFET Transistor 文件:419.64 Kbytes Page:2 Pages | ISC 无锡固电 |
APT5010B2VR产品属性
- 类型
描述
- 型号
APT5010B2VR
- 功能描述
MOSFET N-CH 500V 47A T-MAX
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
POWER MOS V®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
APT |
23+ |
TO-3P |
5000 |
专做原装正品,假一罚百! |
|||
APT |
25+ |
T-MAX |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
APT |
25+ |
MODULE |
90 |
原装正品,欢迎来电咨询! |
|||
APT |
23+ |
TO-3P |
54380 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
APT |
22+ |
SOT227 |
8000 |
原装正品支持实单 |
|||
APT |
18+ |
SOT227 |
85600 |
保证进口原装可开17%增值税发票 |
|||
APT |
24+ |
8866 |
|||||
MICROSEMI PPGS |
1534/1522 |
60 |
公司优势库存 热卖中! |
||||
MICROCHIP(美国微芯) |
24+ |
TO-247 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
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APT5010B2VR规格书下载地址
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DdatasheetPDF页码索引
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