isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collecto

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional tolerance to base drive and collecto

Low-Voltage, Single 8-to-1 and Dual 4-to-1 Cal-Multiplexers

General Description The MAX4539/MAX4540 low-voltage, CMOS 8-channel (MAX4539) and dual 4-channel (MAX4540) multiplexers are ideal for precision ADC calibration and system selfmonitoring applications. These calibration multiplexers (cal-muxes) have precision resistor-dividers to generate accurate

NPN medium power transistor

DESCRIPTION NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers

AC ??7 Codec with National 3D Sound

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