Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 27A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.16Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

POWER MOS V 400V 27A 0.160 Ohm

Quad Bilateral Switch

General Description The CD4016BC is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with CD4066BC. Features ■ Wide supply voltage range: 3V to 15V ■ Wide range of digital and analog switching: ±7.5 VPEAK ■ “ON” r

Double Coated Urethane Foam Tapes

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EPDM Snap-In Liquid Tight Bushings

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Quad Bilateral Switch

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one channel IF filter for receivers of satellite broadcasting system.

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