型号 功能描述 生产厂家&企业 LOGO 操作
APT20M22

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.022Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.022Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

ADPOW

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast

ADPOW

Advanced Power Technology

ADPOW

ISOTOPBoostchopperMOSFETPowerModule

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstandingpe

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

ISOTOPBoostchopperMOSFETPowerModule

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstandingpe

ADPOW

Advanced Power Technology

ADPOW

ISOTOPBuckchopperMOSFETPowerModule

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstandingpe

ADPOW

Advanced Power Technology

ADPOW

ISOTOPBuckchopperMOSFETPowerModule

Features •PowerMOSV®MOSFETs -LowRDSon -LowinputandMillercapacitance -Lowgatecharge -Fastintrinsicdiode -Avalancheenergyrated -Veryrugged •ISOTOP®Package(SOT-227) •Verylowstrayinductance •Highlevelofintegration Benefits •Outstandingpe

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.. •FasterSwitching

ADPOW

Advanced Power Technology

ADPOW

iscN-ChannelMOSFETTransistor

文件:298.84 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

APT20M22产品属性

  • 类型

    描述

  • 型号

    APT20M22

  • 制造商

    ADPOW

  • 制造商全称

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新时间:2024-6-6 23:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
23+
TO-254
21
原装正品,假一罚十!
APT
23+
NA/
3374
原装现货,当天可交货,原型号开票
APT
2018+
module
6000
全新原装正品现货,假一赔佰
APT
01+
TO-264
113
一级代理,专注军工、汽车、医疗、工业、新能源、电力
APT
24+
TO264
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
APT
15+
TO-264
11560
全新原装,现货库存,长期供应
ADPOW
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
APT
22+
NA
1120
中国航天工业部战略合作伙伴行业领导者
APTMICROSEMI
23+
TO-264L
90000
只做原厂渠道价格优势可提供技术支持
原厂
2023+
模块
600
专营模块,继电器,公司原装现货

APT20M22芯片相关品牌

  • Actel
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  • NJRC
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  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

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