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APT150价格
参考价格：￥186.6136
型号：APT150GN120J 品牌：Microsemi 备注：这里有APT150多少钱，2026年最近7天走势，今日出价，今日竞价，APT150批发/采购报价，APT150行情走势销售排行榜，APT150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | MICROSEMI 美高森美 |   | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon | MICROSEMI 美高森美 | | ||
Trench Field-stop IGBT DESCRIPTION · Very low VCE(ON) · Low gate charge simplifies gate drive design and minimizes losses APPLICATIONS · Welding · Solar Inverters · SMPS,UPS,Motor drives | ISC 无锡固电 | | ||
Ultrasoft Recovery Rectifi er Diode 文件：134.11 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
Ultrasoft Recovery Rectifi er Diode 文件：134.11 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | ||
High Voltage Fast Recovery Diode | MICROCHIP 微芯科技 | | ||
IGBT 文件：418.43 Kbytes Page：6 Pages | ADPOW | | ||
IGBT w/o anti-parallel diode | MICROCHIP 微芯科技 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Thunderbolt IGBT 文件：201.37 Kbytes Page：9 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
封装/外壳：SOT-227-4，miniBLOC 包装：散装 描述：IGBT MOD 1200V 215A 625W ISOTOP 分立半导体产品 晶体管 - IGBT - 模块 | MICROCHIP 微芯科技 | | ||
IGBT w/ anti-parallel diode | MICROCHIP 微芯科技 | | ||
Thunderbolt IGBT 文件：178.2 Kbytes Page：6 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Thunderbolt IGBT 文件：178.2 Kbytes Page：6 Pages | MICROSEMI 美高森美 | | ||
封装/外壳：TO-247-3 变式 包装：托盘 描述：IGBT 600V 220A 536W SOT227 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | MICROCHIP 微芯科技 | | ||
IGBT 文件：482.94 Kbytes Page：6 Pages | ADPOW | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
IGBT 文件：533.25 Kbytes Page：9 Pages | ADPOW | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Thunderbolt IGBT 文件：228.89 Kbytes Page：9 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules RF Power MOSFETs 文件：9.86083 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
Thunderbolt IGBT 文件：228.89 Kbytes Page：9 Pages | MICROSEMI 美高森美 | | ||
Thunderbolt IGBT 文件：810.08 Kbytes Page：6 Pages | MICROSEMI 美高森美 | | ||
Power Semiconductors Power Modules 文件：2.83336 Mbytes Page：44 Pages | MICROSEMI 美高森美 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current 150A • VCEX Collector-emitter voltage 600V • hFE DC current gain 750 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 150A • VRRM Repetitive peak reverse voltage 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC | MITSUBISHI 三菱电机 | |
APT150产品属性
- 类型
描述
- 型号
APT150
- 制造商
Carlo Gavazzi
- 功能描述
TERMINAL COVER FOR TOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology |
24+ |
Module |
1262 |
原厂原装正品现货,代理渠道,支持订货!!! |
|||
Microchip Technology / Atmel |
25+ |
SOT-227-4 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
25+ |
66880 |
原装正品，欢迎询价 |
|||||
MICROSEMI |
24+ |
MODULE |
1000 |
全新原装现货 |
|||
MICROSEMI/美高森美 |
26+ |
MOUDLE |
12000 |
只做原装正品 |
|||
APT |
25+ |
99A/1200V/IG |
50 |
全新原装、诚信经营、公司现货销售! |
|||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
|||
APT |
25+ |
MODULE |
112 |
主打螺丝模块系列 |
|||
MICROSEMI |
22+ |
SOT227 |
20000 |
公司只做原装 品质保障 |
|||
Microsemi Corporation |
22+ |
ISOTOP? |
9000 |
原厂渠道,现货配单 |
APT150规格书下载地址
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