型号 功能描述 生产厂家 企业 LOGO 操作
APT1201R6BVFRG

FREDFETs

MICROCHIP

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

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POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate lay

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

ISC

无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

POWER MOS V FREDFET

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate lay

ADPOW

APT1201R6BVFRG产品属性

  • 类型

    描述

  • 型号

    APT1201R6BVFRG

  • 功能描述

    MOSFET N-CH 1200V 8A TO-247

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    POWER MOS V®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-1-28 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
APT
2026+
TO-247
64
原装正品,欢迎来电咨询!
Microchip Technology / Atmel
25+
TO-247-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
Microsemi
1319+
D3PAK
40
一级代理,专注军工、汽车、医疗、工业、新能源、电力
APT
23+
模块
240
全新原装正品,量大可订货!可开17%增值票!价格优势!
MICROCHIP
23+
TO-247
495
正规渠道,只有原装!
APT
23+
TO-247
50000
全新原装正品现货,支持订货
APT
24+
模块
3500
原装现货,可开13%税票
APT
0611+
D3PAK
8
MICROSEMI/美高森美
21+
D3PAK
120000
长期代理优势供应
APT
25+23+
D3PAK
28124
绝对原装正品全新进口深圳现货

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