Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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POWER MOS V 1000V 21A 0.500 Ohm

FREDFETs

Inductive Sensor

Features ■Ø 6.5 mm, smooth barrel ■Stainless steel, 1.4404 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 1 G, Ex zone 0 ■ATEX category II 1 D, Ex zone 20 ■SIL2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 with HFT0

10050 Extreme Compatible Transceiver SFP 10/100/1000Base-T (RJ45, Copper, 100m)

Features ATGBICS 10050 SFP operates on standard Category 5 unshielded twisted-pair copper cabling of link lengths up to 100m. Extreme 1000BASE-T SFP modules support 10/100/1000 auto negotiation and auto MDI/MDIX. Our product meets the specification of Extreme 10050= and we proudly offer a compa

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

Nylon PCB Supports - Imperial Spacing

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5.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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